CVD vapor deposition system for including metal films

CVD vapor deposition system for including metal films

CVD vapor deposition systems are widely used in materials science and engineering for the preparation of various functional thin films, including metal films, oxide films, nitride films, carbon nanotubes, etc. They have important applications in semiconductor, optoelectronics, energy, biomedical, and other fields

Inquire Now

CVD (Chemical Vapor Deposition) is a commonly used thin film deposition technique, which involves the reaction of gas-phase reactants with a substrate surface at high temperatures to form a thin film. Here are some common technical parameters of a CVD system:1. Reaction chamber temperature: Typically ranging from a few hundred to a few thousand degrees Celsius, depending on the desired reaction temperature and material.

2. Reaction gases: Different reaction gases can be used depending on the desired thin film material and structure, such as ammonia, hydrogen, oxygen, silicon dioxide, etc.

3. Pressure range: Typically ranging from a few hundred to a few thousand pascals, depending on the reactants and reaction conditions.

4. Reaction time: The reaction time can vary from a few minutes to several hours, depending on the desired thin film thickness and quality.

5. Substrate material: CVD systems can be used with various substrate materials, such as silicon, glass, metals, etc.

6. Application fields: CVD vapor deposition systems are widely used in materials science and engineering for the preparation of various functional thin films, including metal films, oxide films, nitride films, carbon nanotubes, etc. They have important applications in semiconductor, optoelectronics, energy, biomedical, and other fields.

CVD vapor deposition system for including metal films

Technical parameters

RF power supply	Signal frequency	13.56MHz±0.005%
	Power output range	0~300W
	Maximum reflected power	100W
	Reflected power (at maximum power)	<3W
	Power stability	±0.1%
Tube furnace	Tube material	High purity quartz
	Outer diameter of tube	100mm
	Tube length	1200mm
	Furnace chamber length	440mm
	Heating zone length	200mm+200mm (two temperature zone)
	Constant temperature zone length	200mm
	Continuous working temperature	Max.1100℃
	Temperature control accuracy	±1℃
	Temperature control mode	30 segment program temperature control
	Display mode	LCD
	Sealing method	304 stainless steel vacuum flange
Gas supply system	Model	CY-6Z
	Channel numbers	6
	Measuring unit	Mass flow controller
	Measuring range	A channel: 0～200SCCM for H₂	Remarks: If other ranges are required, please specify when ordering. According to the customer's specific requirements, the flow meter of corresponding gas type and range is optional.
		B channel: 0～200SCCM for CH₄
		C channel: 0～200SCCM for C₂H₄
		C channel: 0～500SCCM for N₂
		D channel: 0～500SCCM for NH₃
		E channel: 0～500SCCM for Ar
	Measurement accuracy	±1.5%F.S
	Working pressure difference	-0.15Mpa~0.15Mpa
	Connecting pipe	304 stainless steel
	Gas channel	304 stainless steel needle valve
	Interface specification	1/4" ferrule connector for gas inlet and outlet
Vacuum system	Mechanical pump	Double-stage rotary vane pump
	Pumping rate	1.1L/S
	Vacuum measurement	Resistance gauge
	Ultimate vacuum	1.0E-1Pa
	Pumping interface	KF16
Sliding rail		Can achieve the sliding of two temperature zone furnace, to realize rapid temperature rise and fall.
Power supply		AC220V 50Hz